1 dual n-channel 2.5-v (g-s) mosfet features ? halogen-free option availa ble ? trenchfet ? power mosfets p roduct summary v ds (v) r ds(on) ( )i d (a ) 20 0.022 at v gs = 4.5 v 6.6 0.030 at v gs = 2.5 v 5.5 notes: a. surfa ce mou nted on f r4 board, t 10 s . * pb con taining terminations are not rohs compliant, exemptions may apply. absolute maximum ratings t a = 25 c, unless otherwise noted p arameter symbol 10 s steady state unit drain-source voltage v ds 20 v gat e-source v oltage v gs 12 continuous d rain current (t j = 150 c) a t a = 25 c i d 6.6 5.2 a t a = 70 c 5.5 3.5 pulsed dr a in current i dm 30 contin uous sour ce current (diode conduction) a i s 1.5 1 .0 max i mum power dissipation a t a = 25 c p d 1.5 1.0 w t a = 70 c 0.96 0.64 ope r ating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance rat ings p a rameter symbol t y p. max. unit maximum junction-to-ambient a t 10 s r thj a 72 83 c / w stea dy state 100 120 maximum junction-to-foot (drain) steady state r thjf 55 70 a v aila b le p b -free rohs* compliant n -channel mosfet g 1 d 1 s 1 n -channel mosfet g 2 d 2 s 2 d 1 g 1 d 1 d 2 g 2 d 2 so -8 5 6 7 8 to p v ie w 2 3 4 1 s 1 s 2 www.din-tek.jp dt m 9 926
2 note s : a. for design aid only; not subject to production testing. b. p ulse test; pulse width 300 s, duty cycle 2 %. stresses b e yond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical ch ara cteristics 25 c, unless otherwise noted specif ications t j = 25 c, unless otherwise noted param e ter symb ol test conditions min. typ. a max. un it static gate threshold v o ltage v gs(th) v ds = v gs , i d = 25 0 a 0.6 1.6 v gate-body leakage i gss v ds = 0 v, v gs = 4 . 5 v 200 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a v ds = 20 v , v gs = 0 v, t j = 70 c 25 on-state dr ain current b i d(o n) v ds 5 v, v gs = 4.5 v 30 a dra i n-source on-state resistance b r ds(on) v gs = 4.5 v, i d = 6.5 a 0.0165 0.022 v gs = 2.5 v , i d = 5.5 a 0.023 0.030 f orward transconductance b g fs v ds = 10 v, i d = 6.5 a 30 s diode forw a rd voltage b v sd i s = 1.5 a, v gs = 0 v 0.71 1.2 v dynam ic a to tal gate charge q g v ds = 10 v, v gs = 4.5 v, i d = 6.5 a 12 18 nc gate-so u rce charge q gs 2.2 gate-dra in charge q gd 3.6 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 10 i d ? 1 a, v gen = 4.5 v, r g = 6 245 365 ns rise time t r 330 495 tur n -off delay time t d(of f) 860 1300 fa l l time t f 510 765 gate-c urrent vs. gate-so u rce vo ltage 0 2 4 6 8 10 0 3 6 9 12 15 18 - gate current (ma) i gss v gs - gate-to-source v oltage (v) gate curren t vs. gate -sou rce voltage 0369 1 2 15 0.01 100 10000 t j = 25 c - gate current (a) i gss 0.1 1 10 1000 v gs - gate-to-source voltage (v) t j = 150 c www.din-tek.jp dt m 9 926
3 typica l c har ac teri stics 25 c, unless otherwise noted output charac teristics on-resistance vs. drain current on-resistance vs. junction temperature 0 5 10 15 20 25 30 0 1234 5 v gs = 5 thru 3 v 2 v 2.5 v v ds - drain-to-source voltage (v) - dr ain current (a) i d 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 v gs = 4.5 v v gs = 2.5 v - on-resistance ( ) r ds(on) i d - drain current (a) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 2 5 5 0 7 5 100 125 150 v gs = 4.5 v i d = 6.5 a t j - j unction temperature (c) (nor maliz ed) - on-resistance r ds(on) transfer ch aracteristics gate charge source-drain diode forward voltage 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t c = 125 c - 55 c v gs - gate-to-source voltage (v) - dr ain current (a) i d 25 c 0 1 2 3 4 5 0 3 6 9 12 15 v ds = 10 v i d = 6.5 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs 1.2 1.5 0.1 10 40 0 0.3 0.6 0.9 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s 1 www.din-tek.jp dt m 9 926
4 ty pi cal ch ara cteristics 25 c, unless otherwise noted on-resistan ce vs. gate-to-source voltage single pulse power 0.00 0.01 0.02 0.03 0.04 0.05 0 123456 i d = 6.5 a - on-resistance ( ) r ds(on) v gs - gate-to-source v oltage (v) 0.001 0 1 160 200 80 10 0.1 pow er (w) time (s) 40 120 0.01 thre shold voltage safe operating area, junction-to-case - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 2 5 5 0 7 5 100 125 150 i d = 250 a variance (v) v gs(th) t j - t emper ature (c ) 100 1 0.1 1 1 0 100 0.01 10 1 ms - drain current (a) i d 0.1 limited by r ds( on) * t c = 25 c single pulse 10 ms 100 ms dc 10 s 1 s v ds - drain- to -source voltage (v) *v gs > minimum v gs at which r ds(on) is specified norm alized t hermal transient impedance, junction-to-ambient 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 100 600 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1. duty cycle , d = 2. p er unit base = r th j a = 11 5 c/w 3. t jm - t a = p dm z th j a (t ) t 1 t 2 t 1 t 2 notes: 4. surf ace mounted p dm square wa v e pulse duration (s) normalized ef f ectiv e t ransient thermal impedance 10 www.din-tek.jp dt m 9 926
5 typica l c har ac teristics 25 c, unless otherwise noted normalized th ermal transient impedance, junction-to-foot 10 -3 10 -2 11 0 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wa v e pulse duration (s) normalized ef f ectiv e transient thermal impedance www.din-tek.jp dt m 9 926
1 di m millimeter s inc hes min ma x min max a 1 .35 1.7 5 0.053 0.069 a 1 0 .10 0.2 0 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) soic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information www.din-tek.jp
1 appl ication note r ecommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r eturn to inde x application note www.din-tek.jp
1 disclaimer all product, produ ct specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
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